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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PBSS5350Z 50 V low VCEsat PNP transistor
Product data sheet Supersedes data of 2003 Jan 20 2003 May 13
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
FEATURES * Low collector-emitter saturation voltage * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * Higher efficiency leading to less heat generation * Reduced PCB area requirements compared to DPAK. APPLICATIONS * Power management - DC/DC converters - Supply line switching - Battery charger - Linear voltage regulation (LDO). * Peripheral drivers - Driver in low supply voltage applications, e.g. lamps, LEDs - Inductive load driver, e.g. relays, buzzers, motors. DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z.
1 2 3
handbook, halfpage
PBSS5350Z
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 base collector emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. -50 -3 -5 <150 UNIT V A A m
4
2, 4 1 3
Top view
MAM288
MARKING TYPE NUMBER PBSS5350Z MARKING CODE PB5350 Fig.1
Simplified outline (SOT223) and symbol.
2003 May 13
2
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; notes 1 and 3 Tamb 25 C; notes 2 and 3 CONDITIONS open emitter open base open collector - - - - - - - - -65 - -65 MIN.
PBSS5350Z
MAX. -60 -50 -6 -3 -5 -1 1.35 2 +150 150 +150 V V V A A A W W
UNIT
C C C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; notes 1 and 3 in free air; notes 2 and 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see "Thermal considerations for SOT223 in the General Part of associated Handbook". VALUE 92 62.5 UNIT K/W K/W
2003 May 13
3
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS - - - 200 200 100 - - - - - - 100 - VCB = -50 V; IE = 0; Tj = 150 C emitter-base cut-off current DC current gain VEB = -5 V; IC = 0 VCE = -2 V; IC = -500 mA IC = -1 A; note 1 IC = -2 A; note 1 VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA IC = -1 A; IB = -50 mA IC = -2 A; IB = -200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage transition frequency collector capacitance IC = -2 A; IB = -200 mA; note 1 IC = -2 A; IB = -200 mA; note 1 - - - - - - 120 - - - - MIN.
PBSS5350Z
TYP. - - -
MAX. -100 -50 -100 - - - -100 -180 -300 <150 -1.2 -1.1 - 40
UNIT nA A nA
collector-base cut-off current VCB = -50 V; IE = 0
mV mV mV m V V MHz pF
base-emitter turn-on voltage VCE = -2 V; IC = -1 A; note 1 IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = Ie = 0; f = 1 MHz
2003 May 13
4
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
PBSS5350Z
handbook, halfpage
1000
MGW167
handbook, halfpage
-1.2
MGW168
hFE 800
(1)
VBE (V) -0.8
(1)
600
(2)
400
(2)
-0.4 200
(3)
(3)
0 -10 -1
-1
-10
-102
-103 -104 I C (mA)
0 -10 -1
-1
-10
-102
-103 -104 I C (mA)
VCE = -2 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
-103 handbook, halfpage VCEsat (mV) -102
(1) (2) (3)
MGW169
handbook, halfpage
-1.4
MGW170
VBEsat (V) -1.2 -1.0
(1)
-0.8
(2)
-10
-0.6
(3)
-0.4 -0.2 -10 -1
-1 -10 -1
-1
-10
-102
-103 -104 I C (mA)
-1
-10
-102
-103 -104 I C (mA)
IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
2003 May 13
5
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
PBSS5350Z
handbook, halfpage
-1000
MGW171
(1) (2) (3) (4) (5) (6)
IC (mA)
handbook, halfpage
-5
MGW172
IC (A)
(1) (2) (3)
-800
-4
(4) (5) (6) (7) (8) (9)
-600
(7) (8)
-3
(10)
-400
(9) (10)
-2
-200
(11) (12)
-1
0 0
Tamb = 25 C. (1) (2) (3) (4)
0
-0.4
-0.8
-1.2
-1.6 -2 VCE (V)
0
-0.4
-0.8
-1.2
-1.6 -2 VCE (V)
Tamb = 25 C. (5) IB = -2.64 mA. (6) IB = -2.31 mA. (7) IB = -1.98 mA. (8) IB = -1.65 mA. (9) IB = -1.32 mA. (10) IB = -0.99 mA. (11) IB = -0.66 mA. (12) IB = -0.33 mA. (1) (2) (3) (4) IB = -250 mA. IB = -225 mA. IB = -200 mA. IB = -175 mA. (5) IB = -150 mA. (6) IB = -125 mA. (7) IB = -100 mA. (8) IB = -75 mA. (9) IB = -50 mA. (10) IB = -25 mA.
IB = -3.96 mA. IB = -3.63 mA. IB = -3.30 mA. IB = -2.97 mA.
Fig.6
Collector current as a function of collector-emitter voltage; typical values.
Fig.7
Collector current as a function of collector-emitter voltage; typical values.
103 handbook, halfpage RCEsat () 102
MGU390
10
1
(1) (2)
10-1 -10-1
(3)
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.8
Collector-emitter equivalent on-resistance as a function of collector current; typical values.
2003 May 13
6
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
PACKAGE OUTLINE
PBSS5350Z
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c y HE b1 vMA
4
Q A A1
1
e1 e
2
bp
3
wM B detail X
Lp
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
OUTLINE VERSION SOT223
REFERENCES IEC JEDEC EIAJ SC-73
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2003 May 13
7
NXP Semiconductors
Product data sheet
50 V low VCEsat PNP transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS5350Z
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2003 May 13
8
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/04/pp9 Date of release: 2003 May 13 Document order number: 9397 750 11058

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